Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells
Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1343864
- Report Number(s):
- NREL/CP-5J00-67953
- Resource Relation:
- Conference: Presented at the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5-10 June 2016, Portland, Oregon
- Country of Publication:
- United States
- Language:
- English
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