Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells
Cu2ZnSn(S, Se)4 (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in the solution deposited case. DLTS reveals signatures of deep majority and minority traps within both types of samples.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1343392
- Report Number(s):
- NREL/CP-5K00-67924
- Resource Relation:
- Conference: Presented at the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5-10 June 2016, Portland, Oregon
- Country of Publication:
- United States
- Language:
- English
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