Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

Journal Article · Thu Dec 01 00:00:00 EST 2016 · Surface Science Spectra

DOI:https://doi.org/10.1116/1.4962156· OSTI ID:1340778

Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.

Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1340778
• Report Number(s): PNNL-SA-118981; KP1704020
• Journal Information: Surface Science Spectra, Vol. 23, Issue 2; ISSN 1055-5269
• Publisher: American Vacuum Society - AIP
• Country of Publication: United States
• Language: English

Related Subjects

Gallium arsenide
GaAs
As-capped GaAs
XPS