Screening mechanisms at polar oxide heterointerfaces
Abstract
The interfaces of polar oxide heterostructures can display electronic properties unique from the oxides they border, as they require screening from either internal or external sources of charge. The screening mechanism depends on a variety of factors, including the band structure at the interface, the presence of point defects or adsorbates, whether or not the oxide is ferroelectric, and whether or not an external field is applied. In this review, we discuss both theoretical and experimental aspects of different screening mechanisms, giving special emphasis to ways in which the mechanism can be altered to provide novel or tunable functionalities. We begin with a theoretical introduction to the problem and highlight recent progress in understanding the impact of point defects on polar interfaces. Different case studies are then discussed, for both the high thickness regime, where interfaces must be screened and each interface can be considered separately, and the low thickness regime, where the degree and nature of screening can be manipulated and the interfaces are close enough to interact. As a result, we end with a brief outlook toward new developments in this rapidly progressing field.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States); KAIST, Daejeon (Korea)
- Univ. of Connecticut, Storrs, CT (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences and Engineering Division
- OSTI Identifier:
- 1339992
- Alternate Identifier(s):
- OSTI ID: 1257500
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Reports on Progress in Physics
- Additional Journal Information:
- Journal Volume: 79; Journal Issue: 7; Journal ID: ISSN 0034-4885
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; oxide heterostructures; polar interfaces; ferroelectricity
Citation Formats
Hong, Seungbum, Nakhmanson, Serge M., and Fong, Dillon D. Screening mechanisms at polar oxide heterointerfaces. United States: N. p., 2016.
Web. doi:10.1088/0034-4885/79/7/076501.
Hong, Seungbum, Nakhmanson, Serge M., & Fong, Dillon D. Screening mechanisms at polar oxide heterointerfaces. United States. https://doi.org/10.1088/0034-4885/79/7/076501
Hong, Seungbum, Nakhmanson, Serge M., and Fong, Dillon D. 2016.
"Screening mechanisms at polar oxide heterointerfaces". United States. https://doi.org/10.1088/0034-4885/79/7/076501. https://www.osti.gov/servlets/purl/1339992.
@article{osti_1339992,
title = {Screening mechanisms at polar oxide heterointerfaces},
author = {Hong, Seungbum and Nakhmanson, Serge M. and Fong, Dillon D.},
abstractNote = {The interfaces of polar oxide heterostructures can display electronic properties unique from the oxides they border, as they require screening from either internal or external sources of charge. The screening mechanism depends on a variety of factors, including the band structure at the interface, the presence of point defects or adsorbates, whether or not the oxide is ferroelectric, and whether or not an external field is applied. In this review, we discuss both theoretical and experimental aspects of different screening mechanisms, giving special emphasis to ways in which the mechanism can be altered to provide novel or tunable functionalities. We begin with a theoretical introduction to the problem and highlight recent progress in understanding the impact of point defects on polar interfaces. Different case studies are then discussed, for both the high thickness regime, where interfaces must be screened and each interface can be considered separately, and the low thickness regime, where the degree and nature of screening can be manipulated and the interfaces are close enough to interact. As a result, we end with a brief outlook toward new developments in this rapidly progressing field.},
doi = {10.1088/0034-4885/79/7/076501},
url = {https://www.osti.gov/biblio/1339992},
journal = {Reports on Progress in Physics},
issn = {0034-4885},
number = 7,
volume = 79,
place = {United States},
year = {Thu Jun 16 00:00:00 EDT 2016},
month = {Thu Jun 16 00:00:00 EDT 2016}
}
Web of Science
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