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Title: Screening mechanisms at polar oxide heterointerfaces

Abstract

The interfaces of polar oxide heterostructures can display electronic properties unique from the oxides they border, as they require screening from either internal or external sources of charge. The screening mechanism depends on a variety of factors, including the band structure at the interface, the presence of point defects or adsorbates, whether or not the oxide is ferroelectric, and whether or not an external field is applied. In this review, we discuss both theoretical and experimental aspects of different screening mechanisms, giving special emphasis to ways in which the mechanism can be altered to provide novel or tunable functionalities. We begin with a theoretical introduction to the problem and highlight recent progress in understanding the impact of point defects on polar interfaces. Different case studies are then discussed, for both the high thickness regime, where interfaces must be screened and each interface can be considered separately, and the low thickness regime, where the degree and nature of screening can be manipulated and the interfaces are close enough to interact. As a result, we end with a brief outlook toward new developments in this rapidly progressing field.

Authors:
 [1];  [2];  [3]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); KAIST, Daejeon (Korea)
  2. Univ. of Connecticut, Storrs, CT (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences and Engineering Division
OSTI Identifier:
1339992
Alternate Identifier(s):
OSTI ID: 1257500
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Reports on Progress in Physics
Additional Journal Information:
Journal Volume: 79; Journal Issue: 7; Journal ID: ISSN 0034-4885
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; oxide heterostructures; polar interfaces; ferroelectricity

Citation Formats

Hong, Seungbum, Nakhmanson, Serge M., and Fong, Dillon D. Screening mechanisms at polar oxide heterointerfaces. United States: N. p., 2016. Web. doi:10.1088/0034-4885/79/7/076501.
Hong, Seungbum, Nakhmanson, Serge M., & Fong, Dillon D. Screening mechanisms at polar oxide heterointerfaces. United States. https://doi.org/10.1088/0034-4885/79/7/076501
Hong, Seungbum, Nakhmanson, Serge M., and Fong, Dillon D. 2016. "Screening mechanisms at polar oxide heterointerfaces". United States. https://doi.org/10.1088/0034-4885/79/7/076501. https://www.osti.gov/servlets/purl/1339992.
@article{osti_1339992,
title = {Screening mechanisms at polar oxide heterointerfaces},
author = {Hong, Seungbum and Nakhmanson, Serge M. and Fong, Dillon D.},
abstractNote = {The interfaces of polar oxide heterostructures can display electronic properties unique from the oxides they border, as they require screening from either internal or external sources of charge. The screening mechanism depends on a variety of factors, including the band structure at the interface, the presence of point defects or adsorbates, whether or not the oxide is ferroelectric, and whether or not an external field is applied. In this review, we discuss both theoretical and experimental aspects of different screening mechanisms, giving special emphasis to ways in which the mechanism can be altered to provide novel or tunable functionalities. We begin with a theoretical introduction to the problem and highlight recent progress in understanding the impact of point defects on polar interfaces. Different case studies are then discussed, for both the high thickness regime, where interfaces must be screened and each interface can be considered separately, and the low thickness regime, where the degree and nature of screening can be manipulated and the interfaces are close enough to interact. As a result, we end with a brief outlook toward new developments in this rapidly progressing field.},
doi = {10.1088/0034-4885/79/7/076501},
url = {https://www.osti.gov/biblio/1339992}, journal = {Reports on Progress in Physics},
issn = {0034-4885},
number = 7,
volume = 79,
place = {United States},
year = {Thu Jun 16 00:00:00 EDT 2016},
month = {Thu Jun 16 00:00:00 EDT 2016}
}

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Cited by: 64 works
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Works referencing / citing this record:

Ionic Gating of Ultrathin and Leaky Ferroelectrics
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Nanoscale design of polarization in ultrathin ferroelectric heterostructures
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Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films
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Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale
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Dielectric properties and resistive switching characteristics of lead zirconate titanate/hafnia heterostructures
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Phase-field simulations of surface charge-induced polarization switching
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Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures
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Designing functional ferroelectric interfaces from first-principles: dipoles and band bending at oxide heterojunctions
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Polarity-driven oxygen vacancy formation in ultrathin LaNiO 3 films on SrTiO 3
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Piezoelectric Materials for Medical Applications
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Nanoscale design of polarization in ultrathin ferroelectric heterostructures
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Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate
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