Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

doi:10.1063/1.4967698

Title: Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Journal Article · Wed Nov 09 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4967698· OSTI ID:1338910

^[1];

^[1]; Akyol, Fatih ^[1]; Allerman, Andrew A. ^[2]; Moseley, Michael W. ^[2]; Armstrong, Andrew M. ^[2]; Rajan, Siddharth ^[1]

The Ohio State Univ., Columbus, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1338910

Alternate ID(s):: OSTI ID: 1331405

Report Number(s):: SAND-2017-0055J; 650201; TRN: US1701276

Journal Information:: Applied Physics Letters, Vol. 109, Issue 19; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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