A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]

Baranowski, Lauryn L.; Zawadzki, Pawel; Lany, Stephan; Toberer, Eric S.; Zakutayev, Andriy

doi:10.1088/0268-1242/31/12/123004

Title: A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory]

Journal Article · Thu Nov 10 00:00:00 EST 2016 · Semiconductor Science and Technology

DOI:https://doi.org/10.1088/0268-1242/31/12/123004· OSTI ID:1335216

Baranowski, Lauryn L. ^[1]; Zawadzki, Pawel ^[2]; Lany, Stephan ^[2]; Toberer, Eric S. ^[1]; Zakutayev, Andriy ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu₂SnS₃. We contrast our findings on Cu₂SnS₃ with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cu₂ZnSnS₄ and Cu(In,Ga)Se₂. We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu₂SnS₃ and Cu₂ZnSnS₄, structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Altogether, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1335216

Alternate ID(s):: OSTI ID: 1331714

Report Number(s):: NREL/JA-5K00-66840

Journal Information:: Semiconductor Science and Technology, Vol. 31, Issue 12; ISSN 0268-1242

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 61 works

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Raman characterization of Cu ₂ ZnSnS ₄ nanocrystals: phonon confinement effect and formation of Cu _x S phases Havryliuk, Ye.; Valakh, M. Ya.; Dzhagan, V. RSC Advances, Vol. 8, Issue 54 https://doi.org/10.1039/c8ra05390a	journal	January 2018
Raman study of flash-lamp annealed aqueous Cu ₂ ZnSnS ₄ nanocrystals Havryliuk, Yevhenii; Selyshchev, Oleksandr; Valakh, Mykhailo Beilstein Journal of Nanotechnology, Vol. 10 https://doi.org/10.3762/bjnano.10.20	journal	January 2019

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