Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

Kawakami, Erika; Jullien, Thibaut; Scarlino, Pasquale; Ward, Daniel R.; Savage, Donald E.; Lagally, Max G.; Dobrovitski, Viatcheslav V.; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.; Vandersypen, Lieven M. K.

doi:10.1073/pnas.1603251113

Title: Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

Journal Article · Mon Oct 03 00:00:00 EDT 2016 · Proceedings of the National Academy of Sciences of the United States of America

DOI:https://doi.org/10.1073/pnas.1603251113· OSTI ID:1328496

Kawakami, Erika ^[1]; Jullien, Thibaut ^[1]; Scarlino, Pasquale ^[1]; Ward, Daniel R. ^[2]; Savage, Donald E. ^[2]; Lagally, Max G. ^[2]; Dobrovitski, Viatcheslav V. ^[3]; Friesen, Mark ^[2]; Coppersmith, Susan N. ^[2]; Eriksson, Mark A. ^[2]; Vandersypen, Lieven M. K. ^[4]

QuTech, 2628 CJ Delft, The Netherlands,, Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands,
University of Wisconsin-Madison, Madison, WI 53706,
Ames Laboratory, US Department of Energy, Iowa State University, Ames, IA 50011,
QuTech, 2628 CJ Delft, The Netherlands,, Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands,, Components Research, Intel Corporation, Hillsboro, OR 97124

A quantum computer is able to solve certain problems that cannot be solved by a classical computer within a reasonable time. The building block of a quantum computer is called a quantum bit (qubit), the counterpart of the conventional binary digit (bit). A qubit unavoidably interacts with its environment, leading to errors in the qubit state. This article reports on the qubit performance of an electron spin in a silicon/silicon-germanium (Si/SiGe) quantum dot, and examines the dominant error mechanisms. We demonstrate that this qubit can be electrically controlled with sufficient accuracy so that remaining errors could, in principle, be corrected using known protocols, even without isotopically purified silicon. This qubit also offers a quantum memory that lasts for almost 0.5 ms.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States); Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-03ER46028; J1102; AC02-07CH11358; W911NF-12-0607; 319360

OSTI ID:: 1328496

Alternate ID(s):: OSTI ID: 1335026; OSTI ID: 1357022

Report Number(s):: IS-J-9131

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Vol. 113 Journal Issue: 42; ISSN 0027-8424

Publisher:: Proceedings of the National Academy of SciencesCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 111 works

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97 MATHEMATICS AND COMPUTING
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Si/SiGe quantum dot
qubit
dynamical decoupling
randomized benchmarking
electron spin

Title: Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

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