Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

Swartz, Craig H.; Zaunbrecher, K. N.; Sohal, S.; LeBlanc, E. G.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Jayathilaka, P. A. R. D.; Myers, T. H.; Holtz, M. W.; Barnes, Teresa M.

doi:10.1063/1.4966574

Title: Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

Journal Article · Fri Oct 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4966574· OSTI ID:1333496

Swartz, Craig H. ^[1]; Zaunbrecher, K. N. ^[2];

^[1];

^[1]; Edirisooriya, M. ^[1];

^[1]; Petersen, J. E. ^[1]; Jayathilaka, P. A. R. D. ^[1];

^[1];

^[1]; Barnes, Teresa M. ^[2]

Texas State Univ., San Marcos, TX (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 10¹⁶cm^-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; SunShot Foundational Program to Advance Cell Efficiency II (F-PACE II)

Grant/Contract Number:: AC36-08GO28308; DEAC36-08GO28308

OSTI ID:: 1333496

Alternate ID(s):: OSTI ID: 1420546

Report Number(s):: NREL/JA-5K00-67465

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 16; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Investigations of the structural, optical properties and electronic structure of CdTe _{1− x} Se _x films fabricated by RF magnetron sputtering Li, Chunxiu; Wang, Ailing; Wu, Lili Materials Research Express, Vol. 6, Issue 6 https://doi.org/10.1088/2053-1591/ab109c	journal	March 2019
Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures Kuciauskas, Darius; Moseley, John; Ščajev, Patrik physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 3 https://doi.org/10.1002/pssr.202070016	journal	January 2020

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