Phase degradation in BxGa1–xN films grown at low temperature by metalorganic vapor phase epitaxy

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; Allerman, Andrew A.; Lee, Stephen R.

doi:10.1016/j.jcrysgro.2016.10.054

Title: Phase degradation in B_xGa_1–xN films grown at low temperature by metalorganic vapor phase epitaxy

Journal Article · Tue Nov 01 00:00:00 EDT 2016 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2016.10.054· OSTI ID:1332951

Gunning, Brendan P. ^[1]; Moseley, Michael W. ^[1]; Koleske, Daniel D. ^[1]; Allerman, Andrew A. ^[1]; Lee, Stephen R. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Using metalorganic vapor phase epitaxy, a comprehensive study of B_xGa_1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1332951

Alternate ID(s):: OSTI ID: 1416480

Report Number(s):: SAND-2016-11244J; PII: S0022024816306492; TRN: US1700123

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces Lymperakis, L. AIP Advances, Vol. 8, Issue 6 https://doi.org/10.1063/1.5029339	journal	June 2018
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Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys Greenman, Kevin; Williams, Logan; Kioupakis, Emmanouil Journal of Applied Physics, Vol. 126, Issue 5 https://doi.org/10.1063/1.5108731	journal	August 2019
BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs Williams, Logan; Kioupakis, Emmanouil Applied Physics Letters, Vol. 111, Issue 21 https://doi.org/10.1063/1.4997601	journal	November 2017
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BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs Williams, Logan; Kioupakis, Emmanouil arXiv https://doi.org/10.48550/arxiv.1902.02692	text	January 2019

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