Thermal equation of state of silicon carbide
- Oakland Univ., Rochester, MI (United States)
- The Univ. of Toledo, Toledo, OH (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- The Univ. of Nevada, Las Vegas, NV (United States)
A large volume press coupled with in-situ energy-dispersive synchrotron X-ray was used to probe the change of silicon carbide (SiC) under high pressure and temperature (P-T) up to 8.1 GPa and 1100 K. The obtained pressure–volume–temperature (P-V-T) data were fitted to a modified high-T Birch-Murnaghan equation of state, yielding values of a series of thermo-elastic parameters, such as, the ambient bulk modulus KTo = 237(2) GPa, temperature derivative of bulk modulus at constant pressure (∂K/∂T)P = -0.037(4) GPa K-1, volumetric thermal expansivity α(0, T)=a+bT with a = 5.77(1)×10-6 K-1 and b = 1.36(2)×10-8 K-2, and pressure derivative of thermal expansion at constant temperature (∂α/∂P)T =6.53±0.64×10-7 K-1GPa-1. Furthermore, we found the temperature derivative of bulk modulus at constant volume, (∂KT/∂T)V, equal to -0.028(4) GPa K-1 by using a thermal pressure approach. In addition, the elastic properties of SiC were determined by density functional theory through the calculation of Helmholtz free energy. Lastly, the computed results generally agree well with the experimental values.
- Research Organization:
- Univ. of Nevada, Las Vegas, NV (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0001982
- OSTI ID:
- 1332529
- Alternate ID(s):
- OSTI ID: 1237871
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 6; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Dynamical stabilization in delafossite nitrides for solar energy conversion
|
journal | January 2018 |
Unconventional superconductivity in 3d rocksalt transition metal carbides
|
journal | January 2019 |
Pressure dependence of the silicon carbide synthesis temperature
|
journal | April 2019 |
Similar Records
High-pressure behavior and thermoelastic properties of niobium studied by in situ x-ray diffraction
High-pressure behavior and thermoelastic properties of niobium studied by in situ x-ray diffraction