Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus

Dong, Shan; Zhang, Anmin; Liu, Kai; Ji, Jianting; Ye, Y. G.; Luo, X. G.; Chen, X. H.; Ma, Xiaoli; Jie, Yinghao; Chen, Changfeng; Wang, Xiaoqun; Zhang, Qingming

doi:10.1103/PhysRevLett.116.087401

Title: Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus

Journal Article · Fri Feb 26 00:00:00 EST 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.116.087401· OSTI ID:1332451

Dong, Shan ^[1]; Zhang, Anmin ^[1]; Liu, Kai ^[1]; Ji, Jianting ^[1]; Ye, Y. G. ^[2]; Luo, X. G. ^[3]; Chen, X. H. ^[3]; Ma, Xiaoli ^[1]; Jie, Yinghao ^[1]; Chen, Changfeng ^[4]; Wang, Xiaoqun ^[5]; Zhang, Qingming ^[6]

Renmin Univ. of China, Beijing (People's Republic of China)
Chinese Academy of Sciences, Anhui (People's Republic of China)
Chinese Academy of Sciences, Anhui (People's Republic of China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (People's Republic of China)
Univ. of Nevada, Las Vegas, NV (United States)
Renmin Univ. of China, Beijing (People's Republic of China); Shanghai Jiao Tong Univ., Shanghai (People's Republic of China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (People's Republic of China)
Renmin Univ. of China, Beijing (People's Republic of China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (People's Republic of China)

The recent renaissance of black phosphorus (BP) as a two-dimensional (2D) layered material has generated tremendous interest, but its unique structural characters underlying many of its outstanding properties still need elucidation. Here we report Raman measurements that reveal an ultralow-frequency collective compression mode (CCM) in BP, which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling, and this result is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of the thickness up to tens of atomic layers, which is considerably higher than previously achieved by using high-frequency Raman modes. Lastly, these findings offer fundamental insights and practical tools for further exploration of BP as a highly promising new 2D semiconductor.

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Research Organization:: Univ. of Nevada, Las Vegas, NV (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0001982

OSTI ID:: 1332451

Alternate ID(s):: OSTI ID: 1239620

Journal Information:: Physical Review Letters, Vol. 116, Issue 8; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 45 works

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