Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Reddy, P.; Hoffmann, M. P.; Kaess, F.; Bryan, Z.; Bryan, I.; Bobea, M.; Klump, A.; Tweedie, J.; Kirste, R.; Mita, S.; Gerhold, M.; Collazo, R.; Sitar, Z.

doi:10.1063/1.4967397

Title: Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal Article · Mon Nov 14 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4967397· OSTI ID:1332017

^[1]; Hoffmann, M. P. ^[2]; Kaess, F. ^[2]; Bryan, Z. ^[2]; Bryan, I. ^[2]; Bobea, M. ^[2]; Klump, A. ^[2]; Tweedie, J. ^[3]; Kirste, R. ^[3]; Mita, S. ^[3]; Gerhold, M. ^[4]; Collazo, R. ^[2]; Sitar, Z. ^[1]

Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA, Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Engineering Science Directorate, Army Research Office, P.O. BOX 12211, Research Triangle Park, North Carolina 27703, USA

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000299

OSTI ID:: 1332017

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 120 Journal Issue: 18; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 40 works

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References (25)

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