Enhanced structural stability and photo responsiveness of CH3NH3SnI3 perovskite via pressure-induced amorphization and recrystallization
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of Nevada, Las Vegas, NV (United States); Carnegie Institution of Washington, Argonne, IL (United States)
- Northwestern Univ., Evanston, IL (United States)
- Carnegie Institution of Washington, Argonne, IL (United States); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China)
- Carnegie Institution of Washington, Argonne, IL (United States)
- Univ. of Nevada, Las Vegas, NV (United States); Southern Univ. of Science and Technology, Shenzhen (China)
An organic–inorganic halide CH3NH3SnI3 perovskite with significantly improved structural stability is obtained via pressure-induced amorphization and recrystallization. In situ high-pressure resistance measurements reveal an increased electrical conductivity by 300% in the pressure-treated perovskite. Photocurrent measurements also reveal a substantial enhancement in visible-light responsiveness. In conclusion, the mechanism underlying the enhanced properties is shown to be associated with the pressure-induced structural modification.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1331268
- Report Number(s):
- LA-UR-15-29677
- Journal Information:
- Advanced Materials, Vol. 28, Issue 39; ISSN 0935-9648
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 147 works
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