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Title: Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

Here, we used time-resolved photoluminescence microscopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm2/(V s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado State Univ., Fort Collins, CO (United States)
  3. Texas State Univ., San Marcos, TX (United States)
Publication Date:
OSTI Identifier:
1330947
Report Number(s):
NREL/JA-5900-66373
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; cadmium telluride; PV device; recombination; photoluminescence