Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

Jiang, H. X.; Lin, Jing Yu

doi:10.1149/2.0031702jss

Title: Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

Journal Article · Wed Sep 07 00:00:00 EDT 2016 · ECS Journal of Solid State Science and Technology

DOI:https://doi.org/10.1149/2.0031702jss· OSTI ID:1330681

Jiang, H. X. ^[1]; Lin, Jing Yu ^[1]

Texas Tech Univ., Lubbock, TX (United States)

This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.

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Research Organization:: Texas Tech Univ., Lubbock, TX (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security

Grant/Contract Number:: NA0002927

OSTI ID:: 1330681

Journal Information:: ECS Journal of Solid State Science and Technology, Vol. 6, Issue 2; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 58 works

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