Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
Patent
·
OSTI ID:1330348
The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 9,477,040
- Application Number:
- 14/801,257
- OSTI ID:
- 1330348
- Resource Relation:
- Patent File Date: 2015 Jul 16
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes
Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers.
Journal Article
·
Wed Jan 08 00:00:00 EST 2020
· ACS Photonics
·
OSTI ID:1330348
+9 more
High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes
Journal Article
·
Tue Aug 09 00:00:00 EDT 2016
· Optics Express
·
OSTI ID:1330348
+5 more
Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers.
Conference
·
Sat May 01 00:00:00 EDT 2010
·
OSTI ID:1330348
+3 more