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Title: Bismuth-induced Raman modes in GaP 1– xBi x

Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP 1- xBi x epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm -1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.
 [1] ;  [2] ;  [2] ;  [2] ;  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0021-4922
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 55; Journal Issue: 10; Journal ID: ISSN 0021-4922
Japan Society of Applied Physics
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; local vibrational modes; dilute bismide alloys