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Title: Bismuth-induced Raman modes in GaP1–xBix

Abstract

Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP1- xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

Authors:
 [1];  [2];  [2];  [2];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1329366
Report Number(s):
NREL/JA-5K00-66536
Journal ID: ISSN 0021-4922
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 55; Journal Issue: 10; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; local vibrational modes; dilute bismide alloys

Citation Formats

Christian, Theresa M., Fluegel, Brian, Beaton, Daniel A., Alberi, Kirstin, and Mascarenhas, Angelo. Bismuth-induced Raman modes in GaP1–xBix. United States: N. p., 2016. Web. doi:10.7567/JJAP.55.108002.
Christian, Theresa M., Fluegel, Brian, Beaton, Daniel A., Alberi, Kirstin, & Mascarenhas, Angelo. Bismuth-induced Raman modes in GaP1–xBix. United States. https://doi.org/10.7567/JJAP.55.108002
Christian, Theresa M., Fluegel, Brian, Beaton, Daniel A., Alberi, Kirstin, and Mascarenhas, Angelo. 2016. "Bismuth-induced Raman modes in GaP1–xBix". United States. https://doi.org/10.7567/JJAP.55.108002. https://www.osti.gov/servlets/purl/1329366.
@article{osti_1329366,
title = {Bismuth-induced Raman modes in GaP1–xBix},
author = {Christian, Theresa M. and Fluegel, Brian and Beaton, Daniel A. and Alberi, Kirstin and Mascarenhas, Angelo},
abstractNote = {Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP1- xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.},
doi = {10.7567/JJAP.55.108002},
url = {https://www.osti.gov/biblio/1329366}, journal = {Japanese Journal of Applied Physics},
issn = {0021-4922},
number = 10,
volume = 55,
place = {United States},
year = {Fri Sep 02 00:00:00 EDT 2016},
month = {Fri Sep 02 00:00:00 EDT 2016}
}

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Cited by: 8 works
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Works referenced in this record:

Band gap of GaAs1−xBix, 0<x<3.6%
journal, June 2003


Molecular beam epitaxy growth of GaAs1−xBix
journal, April 2003


Giant Spin-Orbit Bowing in GaAs 1 x Bi x
journal, August 2006


Dilute nitride based III–V alloys for laser and solar cell applications
journal, August 2001


Similar and dissimilar aspects of III V semiconductors containing Bi versus N
journal, April 2005


light emitting diodes
journal, March 2009


Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
journal, June 2013


Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors
journal, January 2013


Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide
journal, July 1966


Isoelectronic Donors and Acceptors
journal, August 1966


Mysterious absence of pair luminescence in gallium phosphide bismide
journal, May 2015


Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium Phosphide
journal, March 1969


Raman studies on GaAs[sub 1−x]Bi[sub x] and InAs[sub 1−x]Bi[sub x]
journal, January 2001


Bi-induced vibrational modes in GaAsBi
journal, June 2005


Growth of high Bi concentration GaAs 1−x Bi x by molecular beam epitaxy
journal, August 2012


Raman scattering study of GaP:N epitaxial layers
journal, January 1988


Works referencing / citing this record:

Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys
journal, May 2019


MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure
journal, January 2019


Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
journal, December 2018