Bismuth-induced Raman modes in GaP1–xBix
Abstract
Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP1- xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1329366
- Report Number(s):
- NREL/JA-5K00-66536
Journal ID: ISSN 0021-4922
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Japanese Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 55; Journal Issue: 10; Journal ID: ISSN 0021-4922
- Publisher:
- Japan Society of Applied Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; local vibrational modes; dilute bismide alloys
Citation Formats
Christian, Theresa M., Fluegel, Brian, Beaton, Daniel A., Alberi, Kirstin, and Mascarenhas, Angelo. Bismuth-induced Raman modes in GaP1–xBix. United States: N. p., 2016.
Web. doi:10.7567/JJAP.55.108002.
Christian, Theresa M., Fluegel, Brian, Beaton, Daniel A., Alberi, Kirstin, & Mascarenhas, Angelo. Bismuth-induced Raman modes in GaP1–xBix. United States. https://doi.org/10.7567/JJAP.55.108002
Christian, Theresa M., Fluegel, Brian, Beaton, Daniel A., Alberi, Kirstin, and Mascarenhas, Angelo. 2016.
"Bismuth-induced Raman modes in GaP1–xBix". United States. https://doi.org/10.7567/JJAP.55.108002. https://www.osti.gov/servlets/purl/1329366.
@article{osti_1329366,
title = {Bismuth-induced Raman modes in GaP1–xBix},
author = {Christian, Theresa M. and Fluegel, Brian and Beaton, Daniel A. and Alberi, Kirstin and Mascarenhas, Angelo},
abstractNote = {Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP1- xBix epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.},
doi = {10.7567/JJAP.55.108002},
url = {https://www.osti.gov/biblio/1329366},
journal = {Japanese Journal of Applied Physics},
issn = {0021-4922},
number = 10,
volume = 55,
place = {United States},
year = {Fri Sep 02 00:00:00 EDT 2016},
month = {Fri Sep 02 00:00:00 EDT 2016}
}
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Works referencing / citing this record:
Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys
journal, May 2019
- Bushell, Zoe L.; Broderick, Christopher A.; Nattermann, Lukas
- Scientific Reports, Vol. 9, Issue 1
MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure
journal, January 2019
- Steidl, Matthias; Schwarzburg, Klaus; Galiana, Beatriz
- Nanotechnology, Vol. 30, Issue 10
Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
journal, December 2018
- Steidl, Matthias; Wu, Mingjian; Peh, Katharina
- Nanoscale Research Letters, Vol. 13, Issue 1