skip to main content

Title: Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [4] ;  [5]
  1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA
  2. Department of Electrical Engineering, Columbia University, New York NY 10027 USA
  3. National Renewable Energy Laboratory (NREL), Golden CO 80401 USA
  4. Department of Mechanical Engineering, Columbia University, New York NY 10027 USA
  5. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China
Publication Date:
OSTI Identifier:
1328998
Report Number(s):
NREL/JA-5900-66954
Journal ID: ISSN 0935-9648
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Materials; Journal Volume: 28; Journal Issue: 38
Publisher:
Wiley
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE adaptive optoelectronics; monolayer MoS2; piezophototronic effect