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Title: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Journal Article · · Advanced Functional Materials
 [1];  [2];  [3];  [4];  [3];  [5];  [4];  [6];  [2];  [3];  [7]
  1. Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 China
  2. Applied Physics Program and the Materials Research Center, Northwestern University, 2220 Campus Drive Evanston IL 60208 USA
  3. Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA
  4. Department of Materials Science and the Materials Research Center, Northwestern University, 2220 Campus Drive Evanston IL 60208 USA
  5. DND-CAT Synchrotron Research Center APS/ANL Building, 432A, 9700 S. Cass Ave. Argonne IL 60439 USA
  6. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 China
  7. Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA; Polyera Corporation, 8045 Lamon Avenue Skokie IL 60077 USA

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
NSFU.S. OFFICE OF NAVAL RESEARCH
OSTI ID:
1328790
Journal Information:
Advanced Functional Materials, Vol. 26, Issue 34; ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
ENGLISH

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