Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport
Journal Article
·
· Advanced Functional Materials
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 China
- Applied Physics Program and the Materials Research Center, Northwestern University, 2220 Campus Drive Evanston IL 60208 USA
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA
- Department of Materials Science and the Materials Research Center, Northwestern University, 2220 Campus Drive Evanston IL 60208 USA
- DND-CAT Synchrotron Research Center APS/ANL Building, 432A, 9700 S. Cass Ave. Argonne IL 60439 USA
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 China
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145, Sheridan Road Evanston IL 60208 USA; Polyera Corporation, 8045 Lamon Avenue Skokie IL 60077 USA
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- NSFU.S. OFFICE OF NAVAL RESEARCH
- OSTI ID:
- 1328790
- Journal Information:
- Advanced Functional Materials, Vol. 26, Issue 34; ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- ENGLISH
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