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Title: R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch

Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.
Authors:
; ;
Publication Date:
OSTI Identifier:
1328738
Resource Type:
Multimedia
Research Org:
SNL (Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States))
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; SILICON CARBIDE; POWER CONVERSION; ELECTRICITY; TRANSISTOR