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Title: Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)

Direct growth of GaP on Si enables the integration of III-V and Si optoelectronic devices for a wide variety of applications, and has therefore been the subject of much research for many decades. Most of this effort has been directed toward overcoming the two main technical challenges: 1) removing atmospheric oxygen and carbon contamination and 2) establishing the conditions needed for 'APD-free' III-V epitaxy (i.e., without antiphase domains). We have developed an OMVPE process for APD-free GaP growth on Si which overcomes both challenges by using AsH3 to clean and prepare the Si surface in situ at a relatively low temperature. This process is based upon a very brief 'AsH3-cleaning' step which simultaneously removes atmospheric contamination (thereby eliminating the need for Si regrowth) and creates a single-domain As-terminated Si surface. Here we discuss the key process steps using results from a suite of analysis tools.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0022-0248
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth; Journal Volume: 452
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; semiconducting silicon; semiconducting III-V materials; organometallic vapor phase epitaxy; surface structure; nucleation; solar cells