U.S. Department of EnergyOffice of Scientific and Technical Information
Thermal load leveling during silicon crystal growth from a melt using anisotropic materials
Abstract
An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
- Inventors:
- Publication Date:
- Research Org.:
- VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., Gloucester, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1328697
- Patent Number(s):
- 9,464,364
- Application Number:
- 13/292,410
- Assignee:
- VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (Gloucester, MA)
- DOE Contract Number:
- EE0000595
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Nov 09
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Carlson, Frederick M., and Helenbrook, Brian T. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials. United States: N. p., 2016.
Web.
Carlson, Frederick M., & Helenbrook, Brian T. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials. United States.
Carlson, Frederick M., and Helenbrook, Brian T. 2016.
"Thermal load leveling during silicon crystal growth from a melt using anisotropic materials". United States. https://www.osti.gov/servlets/purl/1328697.
@article{osti_1328697,
title = {Thermal load leveling during silicon crystal growth from a melt using anisotropic materials},
author = {Carlson, Frederick M. and Helenbrook, Brian T.},
abstractNote = {An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.},
doi = {},
url = {https://www.osti.gov/biblio/1328697},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 11 00:00:00 EDT 2016},
month = {Tue Oct 11 00:00:00 EDT 2016}
}
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