Pathway to oxide photovoltaics via band-structure engineering of SnO

Peng, Haowei; Bikowski, Andre; Zakutayev, Andriy; Lany, Stephan

doi:10.1063/1.4963661

Title: Pathway to oxide photovoltaics via band-structure engineering of SnO

Journal Article · Sat Oct 01 00:00:00 EDT 2016 · APL Materials

DOI:https://doi.org/10.1063/1.4963661· OSTI ID:1328528

Peng, Haowei; Bikowski, Andre; Zakutayev, Andriy;

All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. SnO has exceptional doping and transport properties among oxides, but suffers from a strongly indirect band gap. Here, we address this shortcoming by band-structure engineering through isovalent but heterostructural alloying with divalent cations (Mg, Ca, Sr, and Zn). Furthermore, using first-principles calculations, we show that suitable band gaps and optical properties close to that of direct semiconductors are achievable, while the comparatively small effective masses are preserved in the alloys. Initial thin film synthesis and characterization support the feasibility of the approach.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1328528

Alternate ID(s):: OSTI ID: 1329527; OSTI ID: 1420533

Report Number(s):: NREL/JA-5K00-67309

Journal Information:: APL Materials, Journal Name: APL Materials Vol. 4 Journal Issue: 10; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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