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Title: 150 mm 4H-SiC Substrate with Low Defect Density

Authors:
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Publication Date:
OSTI Identifier:
1328037
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Science Forum (Online); Journal Volume: 858; Journal Issue: 05, 2016
Publisher:
Trans Tech Publications
Research Org:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Org:
FOREIGN
Country of Publication:
United States
Language:
ENGLISH