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Title: Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

Authors:
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Publication Date:
OSTI Identifier:
1328036
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Science Forum (Online); Journal Volume: 858; Journal Issue: 05, 2016
Publisher:
Trans Tech Publications
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org:
DOE - BASIC ENERGY SCIENCES
Country of Publication:
United States
Language:
ENGLISH