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Title: Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers

Authors:
; ; ; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Dow
  2. (
Publication Date:
OSTI Identifier:
1328019
Resource Type:
Journal Article
Resource Relation:
Journal Name: ECS Transactions (Online); Journal Volume: 69; Journal Issue: 11
Publisher:
Electrochemical Society
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org:
INDUSTRY
Country of Publication:
United States
Language:
ENGLISH