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Title: Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.
Authors:
 [1] ;  [2] ;  [2] ;  [3]
  1. Univ. of Tennessee, Knoxville, TN (United States). Department of Electrical Engineering and Computer Science
  2. Univ. of Tennessee, Knoxville, TN (United States). Department of Electrical Engineering and Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Group (PEEMRG)
  3. Universidade Federal de Mato Grosso do Sul (Brazil). Department of Electrical Engineering
Publication Date:
OSTI Identifier:
1327629
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Industry Applications
Additional Journal Information:
Journal Volume: 51; Journal Issue: 4; Journal ID: ISSN 0093-9994
Publisher:
IEEE
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Facility
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 36 MATERIALS SCIENCE Cycle counting; lifetime estimation; power semiconductor reliability; rainflow algorithms; STATCOM