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Title: PROGRESS IN CHARACTERIZATION OF PRECIPITATES AND DEFECT STRUCTURES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE

This report describes the progress of our current experimental effort on Mg+ ion implanted 3C-SiC. Following our initial study [ ] that suggests possible formation of Mg2Si and MgC2 precipitates as well as tetrahedral voids in 24Mg+ ion implanted 3C-SiC, we have designed specific experiments to confirm the results and examine the inclusions and defects. Relatively low fluence (5.0×1015 24Mg+/cm2) implantation in 3C-SiC was performed to reduce defect concentrations and isolate individual defect features for characterization. In addition, 25Mg+ isotope was implanted in 3C-SiC to the same previously applied ion fluence (9.6×1016 ions/cm2) for atom probe tomography (APT) study of precipitates. Each set of the samples was annealed at 1573 K for 2, 6 and 12 h, respectively. The depth profiles of the implanted Mg were measured using secondary ion mass spectrometry (SIMS) before and after the annealing steps. The samples are currently being analyzed using transmission electron microscopy (TEM) and APT.
Authors:
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Publication Date:
OSTI Identifier:
1327176
Report Number(s):
PNNL-SA-112370
48707; AT2030110
DOE Contract Number:
AC05-76RL01830
Resource Type:
Book
Resource Relation:
Related Information: Fusion Semiannual Progress Report for the Period Ending June 30, 2015, 58:119-122. DOE/ER-0313/58
Publisher:
G Nardella; Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States.
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
Environmental Molecular Sciences Laboratory