Domain Wall Displacement is the Origin of Superior Permittivity and Piezoelectricity in BaTiO ₃ at Intermediate Grain Sizes

Journal Article · Tue Sep 03 00:00:00 EDT 2013 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201301913· OSTI ID:1327041

Ghosh, Dipankar ^[1]; Sakata, Akito ^[2]; Carter, Jared ^[2]; Thomas, Pam A. ^[3]; Han, Hyuksu ^[2]; Nino, Juan C. ^[2]; Jones, Jacob L. ^[4]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611 USA; Division of Engineering and Applied Science, California Institute of Technology, Pasadena CA 91125 USA
2. Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611 USA
3. Department of Physics, University of Warwick, Coventry CV4 7AL UK
4. Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611 USA; Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695 USA

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
• Sponsoring Organization: NSFU.S. ARMY RESEARCH
• OSTI ID: 1327041
• Journal Information: Advanced Functional Materials, Vol. 24, Issue 7; ISSN 1616-301X
• Publisher: Wiley
• Country of Publication: United States
• Language: ENGLISH