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Title: NCD Diamond Semiconductor System for Advanced Power Electronics Systems Integration : CRADA report

The integration of 2D materials such as molybdenum disulphide (MoS2) with diamond (3D) was achieved by forming an heterojunction between these two materials and its electrical performance was studied experimentally. The device charactertics did show good rectifying nature when p-type single crystal diamond was integrated with n-type MoS2. These results are very encouraging indicating possible applications in semiconductor electronics, however further studies are required for a detailed understanding of the transport phenomena at the MoS2/diamond interface.
Authors:
 [1]
  1. AKHAN Semiconductor, Inc., Hoffman Estates, IL (United States)
Publication Date:
OSTI Identifier:
1326956
Report Number(s):
ANL/NST--C1400701
130610
DOE Contract Number:
AC02-06CH11357
Resource Type:
Technical Report
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE; AKHAN Technologies, Inc.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE