Interband coupling and transport interband scattering in s± superconductors
- Ames Lab., Ames, IA (United States)
- Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
A two-band model with repulsive interband coupling and interband transport (potential) scattering is considered to elucidate their effects on material properties. In agreement with previous work, we find that the bands order parameters Δ1,2 differ and the large is at the band with a smaller normal density of states (DOS), Nn2 < Nn1. However, the bands energy gaps, as determined by the energy dependence of the DOS, are equal due to scattering. For each temperature, the gaps turn zero at a certain critical interband scattering rate, i.e. for strong enough scattering the model material becomes gappless. In the gapless state, the DOS at the band 2 is close to the normal state value, whereas at the band 1 it has a V-shape with non-zero minimum. When the normal bands DOS' are mismatched, Nn1 6= Nn2, the critical temperature Tc is suppressed even in the absence of interband scattering, Tc(Nn1) has a dome-like shape. With increasing interband scattering, the London penetration depth at low temperatures evolves from being exponentially at to the powerlaw and even to near linear behavior in the gapless state, the latter being easily misinterpreted as caused by order parameter nodes.
- Research Organization:
- Ames Lab., Ames, IA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-07CH11358
- OSTI ID:
- 1326830
- Report Number(s):
- IS-J 9052
- Country of Publication:
- United States
- Language:
- English
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