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Title: Virtual substrates for epitaxial growth and methods of making the same

A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
1326802
Report Number(s):
9,455,146
12/928,762
DOE Contract Number:
FG36-08GO18071
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 17
Research Org:
California Institute of Technology, Pasadena, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE