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Title: Virtual substrates for epitaxial growth and methods of making the same

Patent ·
OSTI ID:1326802
; ; ;

A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

Research Organization:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG36-08GO18071
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Number(s):
9,455,146
Application Number:
12/928,762
OSTI ID:
1326802
Resource Relation:
Patent File Date: 2010 Dec 17
Country of Publication:
United States
Language:
English

References (14)

Thin film product and method of forming patent July 2003
Process for producing semiconductor article using graded epitaxial growth patent July 2005
Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same patent February 2006
Strained-semiconductor-on-insulator device structures patent February 2006
Method of manufacturing a wafer patent November 2006
Germanium substrate-type materials and approach therefor patent February 2009
Relaxation of a strained layer using a molten layer patent September 2009
Relaxation and transfer of strained layers patent January 2012
Extreme selectivity in the lift‐off of epitaxial GaAs films journal December 1987
Elastically relaxed free-standing strained-silicon nanomembranes journal April 2006
Generation of misfit dislocations in semiconductors journal December 1987
Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks journal July 1975
Dislocations and strain relief in compositionally graded layers journal February 1993
Competing relaxation mechanisms in strained layers journal May 1994

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36 MATERIALS SCIENCE