skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

Journal Article · · IEEE Transactions on Dielectrics and Electrical Insulation
 [1];  [1];  [1]
  1. Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems related to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP)
Grant/Contract Number:
AC05-06OR23177
OSTI ID:
1325554
Report Number(s):
JLAB-ACC-16-2348; DOE/OR/23177-3932
Journal Information:
IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 23, Issue 1; ISSN 1070-9878
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

Cited By (3)

A cryogenically cooled high voltage DC photoemission electron source journal August 2018
Optical-Resonance-Enhanced Photoemission from Nanostructured Ga As Photocathodes journal December 2019
Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes journal January 2020