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Title: Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability.

Abstract not provided.
Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1324414
Report Number(s):
SAND2015-7588C
603558
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Energy Storage Systems and Technology (EESAT).
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English