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Title: On the current drive capability of low dimensional semiconductors: 1D versus 2D

Low-dimensional electronic systems are at the heart of many scaling approaches currently pursuit for electronic applications. Here, we present a comparative study between an array of one-dimensional (1D) channels and its two-dimensional (2D) counterpart in terms of current drive capability. Lastly, our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices.
Authors:
 [1] ;  [1]
  1. Purdue Univ., West Lafayette, IN (United States)
Publication Date:
OSTI Identifier:
1323141
Grant/Contract Number:
AC02-98CH10886
Type:
Accepted Manuscript
Journal Name:
Nanoscale Research Letters
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 1931-7573
Publisher:
Springer
Research Org:
Purdue Univ., West Lafayette, IN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; low-dimension semiconductor; electron transport; current drive capability; carbon nanotube transistors; field-effect transistors; finfet; devices; simulation; design; nm