SIDEWALL ROUGHNESS EFFECTS ON SILICON-ON-INSULATOR (SOI) MEMS FRACTURE STRENGTH.
Conference
·
OSTI ID:1315669
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1315669
- Report Number(s):
- SAND2014-18742C; 540332
- Resource Relation:
- Conference: Proposed for presentation at the Rio Grande Regional Symposium held October 6, 2014 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sidewall Roughness Effects on SOI MEMS Fracture Strength.
SIDEWALL ROUGHNESS EFFECTS ON SOI MEMS FRACTURE STRENGTH.
CHARACTERIZATION OF SOI MEMS SIDEWALL ROUGHNESS.
Conference
·
Sun Jun 01 00:00:00 EDT 2014
·
OSTI ID:1315669
SIDEWALL ROUGHNESS EFFECTS ON SOI MEMS FRACTURE STRENGTH.
Journal Article
·
Wed Oct 01 00:00:00 EDT 2014
· Journal of Micromechanical Systems
·
OSTI ID:1315669
CHARACTERIZATION OF SOI MEMS SIDEWALL ROUGHNESS.
Conference
·
Thu Sep 01 00:00:00 EDT 2011
·
OSTI ID:1315669
+2 more