Laser assisted photoelectrochemical etching of InGaN quantum structures.
Conference
·
OSTI ID:1315252
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1315252
- Report Number(s):
- SAND2014-3359C; 516834
- Resource Relation:
- Conference: Proposed for presentation at the 15th Topical ISE Meeting held April 27-30, 2014 in Niagara Falls, Canada.
- Country of Publication:
- United States
- Language:
- English
Similar Records
InGaN Quantum Dot Fabrication using Quantum Size Controlled Photoelectrochemical Etching.
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemical Etching.
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemical Etching.
Conference
·
Fri May 01 00:00:00 EDT 2015
·
OSTI ID:1315252
+5 more
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemical Etching.
Conference
·
Sat Oct 01 00:00:00 EDT 2016
·
OSTI ID:1315252
+6 more
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemical Etching.
Conference
·
Sat Jul 01 00:00:00 EDT 2017
·
OSTI ID:1315252
+7 more