Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2

Xi, Xiaoxiang; Berger, Helmuth; Forró, László; Shan, Jie; Mak, Kin Fai

doi:10.1103/PhysRevLett.117.106801

Title: Gate Tuning of Electronic Phase Transitions in Two-Dimensional ${NbSe}_{2}$

Journal Article · Mon Aug 29 00:00:00 EDT 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.117.106801· OSTI ID:1418619

Xi, Xiaoxiang ^[1]; Berger, Helmuth ^[2]; Forró, László ^[2]; Shan, Jie ^[1]; Mak, Kin Fai ^[1]

Pennsylvania State Univ., University Park, PA (United States). Dept. of Physics. Center for 2-Dimensional and Layered Materials
Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzerland). Inst. of Condensed Matter Physics

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. We demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal ${NbSe}_{2}$ by an ionic liquid gate. A variation up to $~ 50 %$ in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D ${NbSe}_{2}$ . The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States); Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzerland)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Swiss National Science Foundation (SNSF)

Grant/Contract Number:: SC0012635; SC0013883; DMR-1645901; DMR-1410407; FA9550-16-1-0249

OSTI ID:: 1418619

Alternate ID(s):: OSTI ID: 1310836

Journal Information:: Physical Review Letters, Vol. 117, Issue 10; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 137 works

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Title: Gate Tuning of Electronic Phase Transitions in Two-Dimensional ${NbSe}_{2}$