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Title: Silicon PM Radiation Hardness

Detailed measurements have been made of 9 mm2 SiPMs from Hamamatsu (MPPC) and Zecotek (MAPD) after room temperature annealing after exposure to fluences of 1012 to 1013 cm-2. The data was used to complete the final ADR report.
Authors:
 [1]
  1. Boston Univ., MA (United States)
Publication Date:
OSTI Identifier:
1306466
Report Number(s):
DOE--SC0001520
TRN: US1601815
DOE Contract Number:
SC0001520
Resource Type:
Technical Report
Research Org:
Boston Univ., MA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SILICON; TEMPERATURE RANGE 0273-0400 K; RADIATION HARDNESS; ANNEALING; THERMAL NEUTRONS; PROTONS; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PHOTODIODES; PHOTOCURRENTS