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Title: Single Ion Displacement Effects in Heterojunction Bipolar Transistors.

Abstract not provided.
Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
1304923
Report Number(s):
SAND2015-6953C
599042
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications held November 11-13, 2015 in Kiryu, Gunma, Japan.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English