Controlling the stoichiometry and doping of semiconductor materials
Abstract
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
- Inventors:
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1295614
- Patent Number(s):
- 9,419,170
- Application Number:
- 14/615,068
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Feb 05
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, and Colegrove, Eric. Controlling the stoichiometry and doping of semiconductor materials. United States: N. p., 2016.
Web.
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, & Colegrove, Eric. Controlling the stoichiometry and doping of semiconductor materials. United States.
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, and Colegrove, Eric. 2016.
"Controlling the stoichiometry and doping of semiconductor materials". United States. https://www.osti.gov/servlets/purl/1295614.
@article{osti_1295614,
title = {Controlling the stoichiometry and doping of semiconductor materials},
author = {Albin, David and Burst, James and Metzger, Wyatt and Duenow, Joel and Farrell, Stuart and Colegrove, Eric},
abstractNote = {Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.},
doi = {},
url = {https://www.osti.gov/biblio/1295614},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 16 00:00:00 EDT 2016},
month = {Tue Aug 16 00:00:00 EDT 2016}
}
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Works referenced in this record:
Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013
- Ma, Jie; Kuciauskas, Darius; Albin, David
- Physical Review Letters, Vol. 111, Issue 6, Article No. 067402
Advances in control of doping and lifetime in single-crystal and polycrystalline CdTe
conference, June 2014
- Burst, J. M.; Albin, D. S.; Duenow, J. N.
- 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)