Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

Koyanagi, T.; Lance, M. J.; Katoh, Y.

doi:10.1016/j.scriptamat.2016.08.004

Title: Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

Journal Article · Thu Aug 11 00:00:00 EDT 2016 · Scripta Materialia

DOI:https://doi.org/10.1016/j.scriptamat.2016.08.004· OSTI ID:1295114

Koyanagi, T. ^[1]; Lance, M. J. ^[1]; Katoh, Y. ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML)

Sponsoring Organization:: USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1295114

Alternate ID(s):: OSTI ID: 1359858

Journal Information:: Scripta Materialia, Vol. 125, Issue C; ISSN 1359-6462

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 23 works

Citation information provided by
Web of Science

References (30)

Current status and recent research achievements in SiC/SiC composites Katoh, Y.; Snead, L. L.; Henager, C. H. Journal of Nuclear Materials, Vol. 455, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2014.06.003	journal	December 2014
Handbook of SiC properties for fuel performance modeling Snead, Lance L.; Nozawa, Takashi; Katoh, Yutai Journal of Nuclear Materials, Vol. 371, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2007.05.016	journal	September 2007
Microstructures of beta-silicon carbide after irradiation creep deformation at elevated temperatures Katoh, Yutai; Kondo, Sosuke; Snead, Lance L. Journal of Nuclear Materials, Vol. 382, Issue 2-3 https://doi.org/10.1016/j.jnucmat.2008.08.012	journal	December 2008
Positron annihilation spectroscopy investigation of vacancy clusters in silicon carbide: Combining experiments and electronic structure calculations Wiktor, Julia; Kerbiriou, Xavier; Jomard, Gérald Physical Review B, Vol. 89, Issue 15 https://doi.org/10.1103/PhysRevB.89.155203	journal	April 2014
Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study Orlinski, S. B.; Schmidt, J.; Mokhov, E. N. Physical Review B, Vol. 67, Issue 12 https://doi.org/10.1103/PhysRevB.67.125207	journal	March 2003
Photoluminescence study of the carbon antisite-vacancy pair in $4 H$ - and $6 H -SiC$ Steeds, J. W. Physical Review B, Vol. 80, Issue 24 https://doi.org/10.1103/PhysRevB.80.245202	journal	December 2009
Defect energy levels in electron-irradiated and deuterium-implanted $6 H$ silicon carbide Aboelfotoh, M. O.; Doyle, J. P. Physical Review B, Vol. 59, Issue 16 https://doi.org/10.1103/PhysRevB.59.10823	journal	April 1999
Raman Spectral Characterization of Silicon Carbide Nuclear Fuel Coatings Krautwasser, P.; Begun, G. M.; Angelini, Peter Journal of the American Ceramic Society, Vol. 66, Issue 6 https://doi.org/10.1111/j.1151-2916.1983.tb10075.x	journal	June 1983
Raman spectroscopy study of heavy-ion-irradiated α-SiC Sorieul, S.; Costantini, J-M; Gosmain, L. Journal of Physics: Condensed Matter, Vol. 18, Issue 22 https://doi.org/10.1088/0953-8984/18/22/022	journal	May 2006
Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing Miro, S.; Costantini, J. -M.; Sorieul, S. Philosophical Magazine Letters, Vol. 92, Issue 11 https://doi.org/10.1080/09500839.2012.713133	journal	November 2012
Nitrogen-promoted formation of graphite-like aggregations in SiC during neutron irradiation Wang, P. F.; Ruan, Y. F.; Huang, L. Journal of Applied Physics, Vol. 111, Issue 6 https://doi.org/10.1063/1.3697681	journal	March 2012
Effects of As ⁺ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation Tiong, K. K.; Amirtharaj, P. M.; Pollak, F. H. Applied Physics Letters, Vol. 44, Issue 1 https://doi.org/10.1063/1.94541	journal	January 1984
The one phonon Raman spectrum in microcrystalline silicon Richter, H.; Wang, Z. P.; Ley, L. Solid State Communications, Vol. 39, Issue 5 https://doi.org/10.1016/0038-1098(81)90337-9	journal	August 1981
Observation and possible mechanism of irradiation induced creep in ceramics Katoh, Yutai; Snead, Lance L.; Parish, Chad M. Journal of Nuclear Materials, Vol. 434, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2012.11.035	journal	March 2013
Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 370 https://doi.org/10.1016/j.nimb.2016.01.005	journal	March 2016
Pressure dependence of Raman phonons of Ge and $3 C$ -SiC Olego, Diego; Cardona, Manuel Physical Review B, Vol. 25, Issue 2 https://doi.org/10.1103/PhysRevB.25.1151	journal	January 1982
Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering Serrano, J.; Strempfer, J.; Cardona, M. Applied Physics Letters, Vol. 80, Issue 23 https://doi.org/10.1063/1.1484241	journal	June 2002
Raman spectroscopy of optical phonon confinement in nanostructured materials Arora, Akhilesh K.; Rajalakshmi, M.; Ravindran, T. R. Journal of Raman Spectroscopy, Vol. 38, Issue 6 https://doi.org/10.1002/jrs.1684	journal	January 2007
Effect of disorder on Raman scattering of single-layer $Mo S_{2}$ Mignuzzi, Sandro; Pollard, Andrew J.; Bonini, Nicola Physical Review B, Vol. 91, Issue 19 https://doi.org/10.1103/PhysRevB.91.195411	journal	May 2015
Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy Crowe, Iain F.; Halsall, Matthew P.; Hulko, Oksana Journal of Applied Physics, Vol. 109, Issue 8 https://doi.org/10.1063/1.3575181	journal	April 2011
Microstructural development in cubic silicon carbide during irradiation at elevated temperatures Katoh, Y.; Hashimoto, N.; Kondo, S. Journal of Nuclear Materials, Vol. 351, Issue 1-3, p. 228-240 https://doi.org/10.1016/j.jnucmat.2006.02.007	journal	June 2006
Defect structure and evolution in silicon carbide irradiated to 1 dpa-SiC at 1100 °C Senor, D. J.; Youngblood, G. E.; Greenwood, L. R. Journal of Nuclear Materials, Vol. 317, Issue 2-3 https://doi.org/10.1016/S0022-3115(03)00077-1	journal	May 2003
Thermal conductivity degradation of ceramic materials due to low temperature, low dose neutron irradiation Snead, L. L.; Zinkle, S. J.; White, D. P. Journal of Nuclear Materials, Vol. 340, Issue 2-3 https://doi.org/10.1016/j.jnucmat.2004.11.009	journal	April 2005
Thermal conductivity degradation induced by point defects in irradiated silicon carbide Crocombette, Jean-Paul; Proville, Laurent Applied Physics Letters, Vol. 98, Issue 19 https://doi.org/10.1063/1.3589358	journal	May 2011
Laser-Induced Fano Resonance Scattering in Silicon Nanowires Gupta, R.; Xiong, Q.; Adu, C. K. Nano Letters, Vol. 3, Issue 5 https://doi.org/10.1021/nl0341133	journal	April 2003
Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC Mitani, Takeshi; Nakashima, Shin-ichi; Kojima, Kazutoshi Journal of Applied Physics, Vol. 112, Issue 4 https://doi.org/10.1063/1.4748279	journal	August 2012
Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering Yugami, H.; Nakashima, S.; Mitsuishi, A. Journal of Applied Physics, Vol. 61, Issue 1 https://doi.org/10.1063/1.338830	journal	January 1987
Dielectric Property of Aluminum-Doped SiC Powder by Solid-State Reaction Li, Zhimin; Zhou, Wancheng; Su, Xiaolei Journal of the American Ceramic Society, Vol. 92, Issue 9 https://doi.org/10.1111/j.1551-2916.2009.03140.x	journal	September 2009
Displacement damage in silicon carbide irradiated in fission reactors Heinisch, H. L.; Greenwood, L. R.; Weber, W. J. Journal of Nuclear Materials, Vol. 327, Issue 2-3 https://doi.org/10.1016/j.jnucmat.2004.02.012	journal	May 2004
Raman scattering in polycrystalline $3 C - SiC :$ Influence of stacking faults Rohmfeld, Stefan; Hundhausen, Martin; Ley, Lothar Physical Review B, Vol. 58, Issue 15 https://doi.org/10.1103/PhysRevB.58.9858	journal	October 1998

Cited By (2)

Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature Koyanagi, Takaaki; Katoh, Yutai; Lance, Michael J. Journal of Raman Spectroscopy, Vol. 49, Issue 10 https://doi.org/10.1002/jrs.5425	journal	July 2018
Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC Flessa, Aikaterini; Ntemou, Eleni; Kokkoris, Michael Journal of Raman Spectroscopy, Vol. 50, Issue 8 https://doi.org/10.1002/jrs.5629	journal	May 2019

Similar Records

Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature

Journal Article · Sun Jul 01 00:00:00 EDT 2018 · Journal of Raman Spectroscopy · OSTI ID:1295114

Koyanagi, Takaaki; Katoh, Yutai; Lance, Michael J.

Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O{sup 3+} Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS)

Journal Article · Wed Jun 01 00:00:00 EDT 2011 · AIP Conference Proceedings · OSTI ID:1295114

Williams, Christopher S; Petrosky, James C; Burggraf, Larry W; +1 more

Neutron-irradiation creep of silicon carbide materials beyond the initial transient

Journal Article · Sat Jun 04 00:00:00 EDT 2016 · Journal of Nuclear Materials · OSTI ID:1295114

Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; +3 more

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Silicon carbide
Irradiation defects
Raman spectroscopy

Title: Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

Citation Formats

References (30)

Cited By (2)

Similar Records

Related Subjects