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Title: Notes on the plasma resonance peak employed to determine doping in SiC

Abstract

In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

Authors:
 [1];  [2];  [3];  [3];  [1]
  1. Nelson Mandela Metropolitan Univ., Port Elizabeth (South Africa)
  2. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  3. Linkoping Univ., Linkoping (Sweden)
Publication Date:
Research Org.:
Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1294505
Report Number(s):
INL/JOU-15-35866
Journal ID: ISSN 1350-4495; PII: S1350449515001620
Grant/Contract Number:  
AC07-05ID14517
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Infrared Physics and Technology
Additional Journal Information:
Journal Volume: 72; Journal Issue: C; Journal ID: ISSN 1350-4495
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; infrared reflectance; SiC; plasma resonance; doping concentration

Citation Formats

Engelbrecht, J. A. A., van Rooyen, I. J., Henry, A., Janzen, E., and Sephton, B. Notes on the plasma resonance peak employed to determine doping in SiC. United States: N. p., 2015. Web. doi:10.1016/j.infrared.2015.07.007.
Engelbrecht, J. A. A., van Rooyen, I. J., Henry, A., Janzen, E., & Sephton, B. Notes on the plasma resonance peak employed to determine doping in SiC. United States. https://doi.org/10.1016/j.infrared.2015.07.007
Engelbrecht, J. A. A., van Rooyen, I. J., Henry, A., Janzen, E., and Sephton, B. 2015. "Notes on the plasma resonance peak employed to determine doping in SiC". United States. https://doi.org/10.1016/j.infrared.2015.07.007. https://www.osti.gov/servlets/purl/1294505.
@article{osti_1294505,
title = {Notes on the plasma resonance peak employed to determine doping in SiC},
author = {Engelbrecht, J. A. A. and van Rooyen, I. J. and Henry, A. and Janzen, E. and Sephton, B.},
abstractNote = {In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.},
doi = {10.1016/j.infrared.2015.07.007},
url = {https://www.osti.gov/biblio/1294505}, journal = {Infrared Physics and Technology},
issn = {1350-4495},
number = C,
volume = 72,
place = {United States},
year = {Thu Jul 23 00:00:00 EDT 2015},
month = {Thu Jul 23 00:00:00 EDT 2015}
}

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Free Publicly Available Full Text
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Cited by: 4 works
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Works referencing / citing this record:

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide
journal, December 2017