Low temperature deep reactive ion etching :
Conference
·
OSTI ID:1288865
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1288865
- Report Number(s):
- SAND2011-3530C; 480502
- Resource Relation:
- Conference: Proposed for presentation at the NMAVS Conference held May 24, 2011 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Deep Reactive Ion Etch Process Optimization for Control of Sidewall Profile and Morphology as a Function of Aspect Ratio.
Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon
Contacts to Reactive Ion Etched n-AlxGal=xN.
Conference
·
Fri Oct 01 00:00:00 EDT 2010
·
OSTI ID:1288865
Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon
Conference
·
Sat Aug 01 00:00:00 EDT 1998
·
OSTI ID:1288865
+2 more
Contacts to Reactive Ion Etched n-AlxGal=xN.
Conference
·
Sun Jan 01 00:00:00 EST 2006
·
OSTI ID:1288865
+3 more