Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study

Ambwani, P.; Xu, P.; Haugstad, G.; Jeong, J. S.; Deng, R.; Mkhoyan, K. A.; Jalan, B.; Leighton, C.

doi:10.1063/1.4960343

Title: Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study

Journal Article · Thu Aug 04 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4960343· OSTI ID:1282418

Ambwani, P. ^[1];

^[1]; Haugstad, G. ^[2]; Jeong, J. S. ^[1];

^[1]; Mkhoyan, K. A. ^[1];

^[1]; Leighton, C. ^[1]

Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-06ER46275

OSTI ID:: 1282418

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 120 Journal Issue: 5; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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