skip to main content

Title: Novel and Enhanced Optoelectronic Performances of Multilayer MoS 2 -WS 2 Heterostructure Transistors

Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [3]
  1. Country State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912 Beijing 100083 China
  2. Nano-Science Center & Department of Chemistry, University of Copenhagen, Universitetsparken 5 DK-2100 Copenhagen Ø Denmark
  3. National Renewable Energy Laboratory, 1617 Cole Boulevard Golden CO 80401 USA
Publication Date:
OSTI Identifier:
1274107
Report Number(s):
NREL/JA-5K00-63309
Journal ID: ISSN 1616-301X
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Functional Materials; Journal Volume: 24; Journal Issue: 44
Publisher:
Wiley
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE; National Basic Research Program of China; National Natural Science Foundation of China (NNSFC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; heterostructure transistors; optoelectonics; nanoelectronics