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Title: Population Pulsation Resonances of Excitons in Monolayer MoSe2 with Sub-1 μeV Linewidths

Journal Article · · Physical Review Letters
 [1];  [1];  [2];  [3];  [1];  [1];  [1];  [4];  [5];  [2];  [6];  [7]
  1. Univ. of Washington, Seattle, WA (United States). Dept. of Physics
  2. Univ. of Hong Kong (China). Dept. of Physics and Center of Theoretical and Computational Physics
  3. Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
  6. Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Univ. of Washington, Seattle, WA (United States). Dept. of Electrical Engineering
  7. Univ. of Washington, Seattle, WA (United States). Dept. of Physics; Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. In this paper, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 and <0.2 μeV at low temperature. These linewidths are more than 3 orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on time scales longer than 1 ns. Finally, the ultranarrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Research Grants Council (RGC) of Hong Kong (China)
Grant/Contract Number:
AC05-00OR22725; SC0012509; SC0008145
OSTI ID:
1265565
Alternate ID(s):
OSTI ID: 1179313
Journal Information:
Physical Review Letters, Vol. 114, Issue 13; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 22 works
Citation information provided by
Web of Science

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Cited By (13)

Valleytronics in 2D materials journal August 2016
Directional interlayer spin-valley transfer in two-dimensional heterostructures journal December 2016
2D semiconductor nonlinear plasmonic modulators journal July 2019
Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors journal January 2019
Exciton states in monolayer MoSe 2 : impact on interband transitions journal November 2015
Many-body effects in nonlinear optical responses of 2D layered semiconductors journal February 2017
Dark excitons and the elusive valley polarization in transition metal dichalcogenides journal February 2017
Valley trion dynamics in monolayer MoSe 2 journal December 2016
Nonlinear optical performance of few-layer molybdenum diselenide as a slow-saturable absorber journal January 2018
Trion Formation Dynamics in Monolayer Transition Metal Dichalcogenides text January 2015
Many-body effects in nonlinear optical responses of 2D layered semiconductors text January 2016
Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures text January 2016
Dark excitons and the elusive valley polarization in transition metal dichalcogenides text January 2017

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