Strain-Mediated Interfacial Diffusion and Shifts in ISB Transition Energies in AlN/AlGaN Superlattices.
Conference
·
OSTI ID:1263956
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1263956
- Report Number(s):
- SAND2015-5020C; 594944
- Resource Relation:
- Conference: Proposed for presentation at the 57th Electronic Materials Conference held June 24-26, 2015 in Columbus, OH.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Intersubband Absorption in AlN-AlGaN Superlattices (invited).
Layer Disordering and Doping Compensation of an Intersubband AlGaN/AlN Superlattice by Silicon Implantation.
Silicon Impurity-Induced Layer Disordering of AlGaN/AlN Superlattices.
Conference
·
Tue May 01 00:00:00 EDT 2012
·
OSTI ID:1263956
+1 more
Layer Disordering and Doping Compensation of an Intersubband AlGaN/AlN Superlattice by Silicon Implantation.
Journal Article
·
Fri Aug 01 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:1263956
+4 more
Silicon Impurity-Induced Layer Disordering of AlGaN/AlN Superlattices.
Journal Article
·
Fri Jan 01 00:00:00 EST 2010
· Applied Physics Letters
·
OSTI ID:1263956