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Title: Communication: Effect of accidental mode degeneracy on Raman intensity in 2D materials: Hybrid functional study of bilayer phosphorene

Journal Article · · Journal of Chemical Physics
DOI:https://doi.org/10.1063/1.4958460· OSTI ID:1467841
 [1];  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics

Bulk black phosphorus has two optical phonon modes labeled as Ag2 and B2u, respectively, that are nearly degenerate in frequency. However, density functional theory calculations using local or semi-local functionals cannot reproduce this degeneracy. In this, we propose a hybrid functional approach aided by van der Waals (vdW) force fields, which can accurately describe the lattice dynamic and electronic properties of both bulk and few-layer black phosphorus (phosphorene). Using this approach we show that in bilayer phosphorene, the two Raman modes derived from the B2u and Ag2 modes could exhibit strong resonance as a result of the accidental degeneracy so that both modes could be observed in Raman experiment. Without the mode degeneracy, however, the Raman intensity of the B2u-derived mode would be too weak to be observed. We further show that the accidental degeneracy is correlated to the applied strain, which enables Raman spectroscopy to be a powerful tool for characterizing built-in strains in 2D materials, e.g., due to the interaction with substrates, which has emerged as an important issue in vdW epitaxy.

Research Organization:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
Grant/Contract Number:
SC0002623; AC02-05CH11231
OSTI ID:
1467841
Alternate ID(s):
OSTI ID: 1261218
Journal Information:
Journal of Chemical Physics, Vol. 145, Issue 2; ISSN 0021-9606
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (30)

Generalized Gradient Approximation Made Simple journal October 1996
Effect of van der Waals interactions on the structural and elastic properties of black phosphorus journal July 2012
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2 journal March 2010
Interlayer Breathing and Shear Modes in Few-Trilayer MoS 2 and WSe 2 journal February 2013
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2 journal January 2013
Band gap engineering of a soft inorganic compound PbI 2 by incommensurate van der Waals epitaxy journal January 2016
Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi 2 Te 3 , Bi 2 Se 3 , and Sb 2 Te 3 materials journal March 2012
Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization journal May 2014
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Photooxidation and quantum confinement effects in exfoliated black phosphorus journal May 2015
Identifying the Crystalline Orientation of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy journal January 2015
Modulation of electronic and mechanical properties of phosphorene through strain journal March 2015
Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus journal May 2015
Thermal properties of black and blue phosphorenes from a first-principles quasiharmonic approach journal August 2015
Unusual Angular Dependence of the Raman Response in Black Phosphorus journal February 2015
Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene journal August 2014
Raman and infrared reflection spectroscopy in black phosphorus journal March 1985
Raman spectra of few-layer phosphorene studied from first-principles calculations journal April 2015
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility journal March 2014
Lattice vibrational modes and Raman scattering spectra of strained phosphorene journal August 2014
Rationale for mixing exact exchange with density functional approximations journal December 1996
Giant Phononic Anisotropy and Unusual Anharmonicity of Phosphorene: Interlayer Coupling and Strain Engineering journal February 2015
First-principles Raman spectra of MoS2, WS2 and their heterostructures journal January 2014
Black phosphorus field-effect transistors journal March 2014
Raman scattering intensities in α-quartz: A first-principles investigation journal February 2001
The renaissance of black phosphorus journal March 2015
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu journal April 2010
Valley polarization in MoS2 monolayers by optical pumping journal June 2012
The Electrical Properties of Black Phosphorus journal November 1953

Cited By (2)

Adsorbing the magnetic superhalogen MnCl 3 to realize intriguing half-metallic and spin-gapless-semiconducting behavior in zigzag or armchair SiC nanoribbon journal January 2018
Phonon-polaritonics: enabling powerful capabilities for infrared photonics journal October 2019