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Title: Electronic structure of warm dense silicon dioxide

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1261196
DOE Contract Number:  
AC02-05CH11231; FG52-10NA29649; NA0001859; AC02-76SF0051
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 21; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English

Citation Formats

Engelhorn, K., Recoules, V., Cho, B. I., Barbrel, B., Mazevet, S., Krol, D. M., Falcone, R. W., and Heimann, P. A. Electronic structure of warm dense silicon dioxide. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.214305.
Engelhorn, K., Recoules, V., Cho, B. I., Barbrel, B., Mazevet, S., Krol, D. M., Falcone, R. W., & Heimann, P. A. Electronic structure of warm dense silicon dioxide. United States. https://doi.org/10.1103/PhysRevB.91.214305
Engelhorn, K., Recoules, V., Cho, B. I., Barbrel, B., Mazevet, S., Krol, D. M., Falcone, R. W., and Heimann, P. A. 2015. "Electronic structure of warm dense silicon dioxide". United States. https://doi.org/10.1103/PhysRevB.91.214305.
@article{osti_1261196,
title = {Electronic structure of warm dense silicon dioxide},
author = {Engelhorn, K. and Recoules, V. and Cho, B. I. and Barbrel, B. and Mazevet, S. and Krol, D. M. and Falcone, R. W. and Heimann, P. A.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.214305},
url = {https://www.osti.gov/biblio/1261196}, journal = {Physical Review B},
issn = {1098-0121},
number = 21,
volume = 91,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}