Electronic structure of warm dense silicon dioxide
- Authors:
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1261196
- DOE Contract Number:
- AC02-05CH11231; FG52-10NA29649; NA0001859; AC02-76SF0051
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 21; Journal ID: ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Engelhorn, K., Recoules, V., Cho, B. I., Barbrel, B., Mazevet, S., Krol, D. M., Falcone, R. W., and Heimann, P. A. Electronic structure of warm dense silicon dioxide. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.214305.
Engelhorn, K., Recoules, V., Cho, B. I., Barbrel, B., Mazevet, S., Krol, D. M., Falcone, R. W., & Heimann, P. A. Electronic structure of warm dense silicon dioxide. United States. https://doi.org/10.1103/PhysRevB.91.214305
Engelhorn, K., Recoules, V., Cho, B. I., Barbrel, B., Mazevet, S., Krol, D. M., Falcone, R. W., and Heimann, P. A. 2015.
"Electronic structure of warm dense silicon dioxide". United States. https://doi.org/10.1103/PhysRevB.91.214305.
@article{osti_1261196,
title = {Electronic structure of warm dense silicon dioxide},
author = {Engelhorn, K. and Recoules, V. and Cho, B. I. and Barbrel, B. and Mazevet, S. and Krol, D. M. and Falcone, R. W. and Heimann, P. A.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.214305},
url = {https://www.osti.gov/biblio/1261196},
journal = {Physical Review B},
issn = {1098-0121},
number = 21,
volume = 91,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}
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